Abstract
In this paper, we will discuss the top-gate effect under illumination in amorphous InGaZnO4 thin-film transistors (a-InGaZnO TFTs) having a transparent top-gate electrode. The dependence of bottom-gate transfer characteristics on top-gate voltage (Vtg) shows a specific behavior under 425 nm light illumination, which we call the “photoinduced top-gate effect”. The subthreshold current under 425 nm light illumination, whose photon energy is smaller than the optical bandgap of a-InGaZnO, increases with increasing magnitude of negative Vtg. Measurements at various temperatures support the idea that the photoinduced top-gate effect arises from a tunneling mechanism due to a negative Vtg.
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