Photo-induced potential barrier in As-Se-Ge films

Abstract

Photo-excited effects in AsSeGe and AsSeGeSn amorphous films have been studied under illumination of different light sources. AsSeGe system exhibited rectifying characteristics under illumination of the light with hν > E g, while AsSeGeSn film did not show such phenomena. The illumination of the IR light along with the light of hν > E g weakened the rectification behavior. The photovoltage and I-V characteristics results suggest the existence of “photo-induced” potential barrier in AsSeGe system, which is considered to concern the creation and destruction of neutral defect states D°.