Abstract
Metastability and reversibility of a variety of photo-induced phenomena in amorphous semiconductors have been widely researched. In the introductory part of this talk, these metastable effects are briefly reviewed from a phenomenological point of view. The main part is focused on photo-induced ESR centers with g-values equal to 2.005, 2.004 and 2.01 in undoped hydrogenated- and deuterated-amorphous silicons. It has been shown from electron-spin-echo-modulation experiments using pulsed ESR techniques that (1) deuterium (or hydrogen) is separated from a photo-created dangling bond defect (as well as a native one) by at least 5 A, (2) Si-D-Si three-center bonds were not observed in the vicinity of a dangling bond defect, and (3) 29 Si hyperfine structure does exist in the light-induced ESR with g=2.004 and g=2.01 and its splitting width is close to that of dangling bond centers (g=2.005). These results are discussed with an emphasis towards the structural randomness, network connectivity, and the nature of chemical bonds.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
