Abstract
We performed photoinduced inverse spin Hall effect (ISHE) measurements on Pt/GaAs(001) and Pt/Ge(001) junctions at room temperature. The spin-oriented electrons, photogenerated at the direct gap of the semiconductor using circularly polarized light, provide a net spin current which yields an electromotive field E<sub>ISHE</sub> in the Pt layer. Such a signal is clearly detected in GaAs, where electrons diffuse around the Γ point of the Brillouin zone, and also in Ge, despite the strong Γ to <i>L</i> scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is investigated in both junctions.
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