Abstract
The effects of photoinduced hole doping on the transport properties of YBa 2Cu 3O y thin films and grain boundary junctions are studied using high-power-density HeNe laser light. Substantial photoinduced enhancements of both conductivity and T c are observed for thin films with an oxygen content y and T c of up to 6.8 and 87 K, respectively. This fact as well as the very slight y dependence of the number of photoinduced holes in the CuO 2 plane favor the photoassisted oxygen ordering mechanism. Similar photoexcitation in grain boundary junctions induces a substantial I c enhancement well below T c which can be primarily explained by the hole doping of the degraded regions with oxygen deficiency and/or disorder near the grain boundary.
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