Excess noise in thin film grain boundary Josephson junctions and devices

Abstract

The subject of electronic noise in high- superconducting Josephson devices and in their applications is considered. Several types of grain boundary junctions, prepared in different ways by four separate international laboratories, are fully characterized in terms of their electrical and noise properties at a range of temperatures, frequencies, magnetic fields and in the presence of microwaves. Similar characterization is carried out for multijunction Josephson flux-flow arrays, and bi-epitaxial SQUIDs. The theory of Likharev and Semenov for thermal noise in low- junctions is adopted as a reference against which excess noise can be identified in high- junctions. It is combined with theoretical models of excess noise based on fluctuations of critical current and resistance to provide accurate fitting of the observed noise curves. It is shown that the normalized levels of critical current and normal resistance fluctuations for all of the junction types examined are remarkably close (typically around and at 100 Hz) and are nearly independent of temperature in the range T = 30 - 80 K. The frequency dependence is close to the universal 1/f law with some deviations due to trapping of charge carriers at discrete states in the tunnelling barrier. Measurements of voltage noise levels and critical current fluctuations in multijunction flux-flow amplifiers, reported for the first time, are consistent with levels in single junctions of the same type. Excess noise is studied as a function of external magnetic field, in a way that has not been previously described. A new interpretation of the magnetic field-dependent noise data indicates that absolute levels of critical current fluctuations are nearly independent of applied magnetic field. This observation does not appear to have been reported elsewhere. It has important implications for the operation of grain boundary Josephson devices in real applications. Voltage noise in the presence of microwave irradiation, at operating points between Shapiro steps, is consistent with a modified form of the Likharev - Semenov equation which takes into account the known level of critical current fluctuations as measured in field-free conditions. The implications of these results for further improvements in device performance are discussed, and directions for further work are suggested.