Abstract
A photoinduced semiconductor–metal phase transition that occurs in a surface layer of vanadium dioxide film on an aluminum substrate within the time Δt < 1 ps has been studied theoretically. A nonthermal mechanism of the development of instability has been considered. It has been shown that a heterophase structure containing metallic and semiconductor layers is formed in the VO2 film. The phase transition time τ has been calculated as a function of the distance z from the film surface. Comparison with the experiment has been carried out.
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