Abstract
A non-thermal photoinduced semiconductor-metal phase transition occurring over a time Δt <1ps in a vanadium dioxide film on an aluminum substrate is theoretically investigated. It is shown that under the action of a short laser pulse in the VO2 film a structure of metal and semiconductor layers parallel to the substrate is formed. The dependence of the layer thickness on the energy density W of the laser pulse is obtained. A diagram is constructed that determines the number of layers depending on the energy density W of the laser pulse and the thickness a of the film. A comparison with experimental data is made.
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