Abstract
The photoinduced changes in the optical properties of obliquely deposited a-As 2S 3 thin films are followed. It is established that the increase of the refractive index and absorption coefficient as a result of illumination is highest in the sample prepared at 70° vapour incidence angle. In addition, the refractive index dispersion has been analyzed according to the Wemple–Didomenico single oscillator model and the effective As coordination number in non-illuminated and illuminated samples has been evaluated. On the basis of the results obtained the role of microstructure in the photoinduced transformations in vacuum deposited arsenic chalcogenide thin films is discussed.
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