Abstract
Abstract Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photo-induced changes in their hysteresis behavior: 1) a photo-induced change in the coercive voltage and 2) a photo-induced suppression of the switchable polarization. Both types of photo-induced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photo-induced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordina...
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