Abstract
Photoinduced absorption (PA) measurements were carried out for plaosphorus- and nitrogen-doped hydrogenated amorphous silicon films prepared at a high deposition rate. We introduced an “empirical" doping efficiency η* which was determined from the changes induced by doping on the activation energy of conductivity and on the threshold energy of a hole trapped center in PA measurements. The η* has been found to be a meaningful quantity as a qualitative measure of the doping efficiency in phosphorusdoped films. On the basis of the changes in η* induced by doping, the doping effects in nitrogen-doped films are discussed.
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