Abstract
AbstractThe photoelectrical properties of a crystal with identically orientated straight edge dislocations are considered. Such a medium has a preferable direction due to the absence of axial symmetry of the dislocation potential. Hence, the photogalvanic bulk effect may occur. A generalization of the Rhead model is obtained taking into account the deformation potential. Scattering on a dislocation in the classic limit is considered for this case and for the case of an unscreened deformation potential. The tensor of the photogalvanic effect in the ranges of direct interband transitions and of light absorption by free carriers is obtained using the results.
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