Photo-excited effects and the growth mechanism on epitaxially grown Al 2O 3(100) on Si(100)

Abstract

Photo-excited effects on epitaxially grown Al 2O 3(100) on Si(100) were studied using both ArF(193nm) or KrF(248 nm) excimer laser light, and a radical-oxygen source by a RF-remote plasma. These methods can clarify the important photo-excited process by separating the reaction processes, which consist of vapor-phase, surface, and substrate excitation. In the case of KrF irradiation with TMA and O 2, the epitaxial temperature and the growth rate did not change drastically. On the other hand, epitaxial temperature reductions of 140°C and 100°C were observed in the cases of ArF with TMA and O 2, and of a RF-remote O radical source, respectively. Direct photo-excitation of TMA and O 2 is a very important process to reduce the epitaxial temperature of Al 2O 3 on Si. However, the substrate-excited effect was not so useful in this growth because after the initial growth stage an Al 2O 3 barrier layer prevented the carriers from reaching the growth surface.