Abstract
Chemical reactions on annealed Pd/GaAs(110) interfaces have been studied using soft x-ray core level photoemission spectroscopy. Substantial surface segregation of As and formation of an As-rich ternary phase close to the surface have been observed. Thicker Pd overlayers (22 and 52 Å) annealed to between 250 and 380 °C form reacted interfaces with chemically stable composition. As with the room temperature case, the reaction products due to annealing appear to be As rich close to the surface. Our results are compared with earlier transmission electron microscope studies and sources of some differences are discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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