Abstract
Photoelectron spectroscopy with synchrotron radiation has been used to study changes in the region of the valence band and Ga and As 3d core levels of GaAs (110) resulting from exposure to nitric oxide (NO) at substrate temperatures of 40–140 K. Up to about 60 K, NO physisorbs. Thermal and photochemical effects have been observed during annealing of the adsorbed layer or irradiation by the monochromatized synchrotron radiation beam. At about 70 K, a distinct molecular species forms along with adsorbed O. This species, which desorbs and/or dissociates above about 90 K, is identified as nitrous oxide (N2O ) on the basis of comparison with similar data for N2O condensed on GaAs. Pre-adsorbed O inhibits N2O formation, suggesting that the GaAs surface participates actively in the process. Above about 100 K, only O adsorption is observed, occurring by a mechanism different from that leading to O adsorption at lower temperature.
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