Abstract
X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and work-function measurements have been used to investigate the Y/SiO 2/Si(1 0 0) interfaces in situ as a function of annealing temperature. The results show that yttrium is very reactive with SiO 2 and can react with SiO 2 to form Y silicate and Y 2O 3 even at room temperature. Annealing leads to the continual growth of the Y silicate. Two distinctive reaction mechanisms are suggested for the annealing processes below and above 600 K. The reaction between metallic yttrium and SiO 2 dominates the annealing processes below 600 K, while at annealing temperatures above 600 K, a reaction between the new-formed Y 2O 3 and SiO 2 becomes dominant. No Y silicide is formed during Y deposition and subsequent annealing processes. UPS valence-band spectra indicate the silicate layer is formed at the top surface. After 1050 K annealing, a Y-silicate/SiO 2/Si structure free of Y 2O 3 is finally formed.
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