Abstract
Antimony layers can be used as a barrier to prevent In outdiffusion from InP(100) into a ZnSe epilayer. Surface sensitive synchrotron radiation photoemission spectra were taken during the heterostructure growth to monitor interdiffusion and reactivity at the interface. Our results demonstrate that Sb barrier layers of various thicknesses and treatments reduce In outdiffusion, thus reducing the reactivity and uncontrolled interfacial composition. However, fully effective diffusion barriers exceed the Sb critical film thickness, preventing the growth of a coherently strained ZnSe film on the InP substrate.
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