Abstract
The influence of translational kinetic energy of incident O 2 molecules for the passive oxidation of clean Si(0 0 1) surfaces at room temperature has been studied by photoemission spectroscopy using high-resolution synchrotron radiation. The O 2 incident energy was controlled up to about 3 eV via supersonic seed molecular beam techniques. Predicted two potential energy barriers for the O 2 dissociative chemisorption were indistinct. Photoemission spectra of Si-2p and O-1s as a function of incident energy revealed the incident energy induced oxidation, in which the oxide layers thickness was controlled to the extent of 0.6 nm.
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