Erratum: “Oxidation of Aqueous HF-treated Si(001) Surface Induced by Translational Kinetic Energy of O2 at Room Temperature”

Abstract

The oxidation induced by the translational kinetic energy of O2 on the Si(001) surface treated with HF solution were investigated by combining synchrotron radiation photoemission spectroscopy with the supersonic molecular beam techniques. The oxidation at room temperature did not progress up to 3600 L of O2 exposure with incident energy of 0.04 eV, whereas the oxidation states of up to Si4+ species were formed in the case of 3.0 eV. The oxide-layer thickness was estimated to be 0.26 nm at the final oxidation stages. We concluded that the Si atoms at the top layers were oxidized by the incident energy of 3.0 eV.