Abstract
Clean and bismuth-covered GaSb(111)A surfaces were characterized using low energy electron diffraction and synchrotron radiation photoelectron spectroscopy. The Ga 3d core-level spectra from the clean 2 × 2 reconstructed surface exhibit both bulk and surface components, while only one spin-orbit split component is required to fit the Sb 4d lines. The attenuation profile of the corelevel intensity with coverage indicates a Stranski-Krastanov growth mode for room temperature Bi deposition. The interface is apparently abrupt, but the overlayer is not epitaxially ordered. Line shape analysis of the Bi 5d, Sb 4d and Ga 3d core-level spectra shows that chemical bonding takes place primarily between the adsorbed Bi atoms and the Ga atoms of the substrate
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