Abstract
The interaction of bismuth with cleaved GaSb(110) surfaces at room temperature and after annealing has been investigated with low energy electron diffraction and synchrotron radiation photoelectron spectroscopy. The attenuation profiles of the core-level intensity with coverage indicates a Stranski-Krastanov growth mode. Line shape analysis of the Bi 5d, Sb 4d, and Ga 3d core-level spectra provides strong evidence for a zigzag chain model for the first monolayer of Bi on the GaSb surface similar to that found for Sb and Bi adsorbates on other (110) surfaces of III–V compound semiconductors. After annealing at between 200–330°C the surface exhibits a (1 × 2) diffraction pattern and the photoemission data show that the Bi coverage corresponds to 0.6 ML which indicates that every second Bi zigzag chain is missing.
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