Photoemission electron microscopy of arrays of submicron nickel rods in a silicon dioxide matrix

Abstract

Arrays of Ni rods (∼500 nm diameter) formed by the ion-track technology in combination with electrochemical deposition into a SiO2 matrix on the surface of single-crystal silicon plates have been investigated using photoemission electron microscopy with high-intensity synchrotron (undulator) radiation. An analysis of the Ni L 2,3 X-ray absorption near-edge structure (XANES) spectra has demonstrated that rod-like structures in pores and connecting bridges between the rods are formed by a metallic nickel phase, which is stable to oxidation by atmospheric oxygen. No formation of intermediate compound phases (nickel silicides and oxides) is observed at the Ni/SiO2 heterojunction, whereas oxidized nickel(II) species are identified on the surface of the SiO2 matrix, which presumably can be attributed to nickel silicate and hydroxide compounds formed upon nickel(II) chemisorption in electrochemical deposition electrolytes.