Abstract
The oxidation of polycrystalline copper surfaces under oxygen ion bombardment at 80 and 300 K has been investigated with XPS and UPS. The degree of oxidation has been estimated from XPS data involving the relative intensity of the shake-up peak of CuO and the shift of Cu(L 3VV) Auger line. Copper surfaces were mainly oxidized to Cu 2O by 0.5, 3 and 10 keV ion bombardment at 300 K. The amount of CuO increased with decreasing ion energy. On the other hand, the sample surface was completely oxidized to CuO with some adsorbates under 0.5 keV oxygen ion bombardment at 80 K. These phenomena indicate that the oxidation by oxygen ion bombardment with lower ion energy is similar to that under higher oxygen potential and that the lowering of the substrate temperature, which gives rise to the lowering of oxidation free energy, causes the increasing degree of oxidation.
Published Version
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