Abstract
Thin films of indium telluride (In 2Te 3) were electrodeposited from propylene carbonate solutions containing InCl 3 and tri-n- butyl phosphine telluride. Adherent grey-black films were deposited using potentiostatic deposition in the range of −750 to −1100 mV and galvanostatic deposition in the range of 25 to 150 μA/cm 2. DC polarography studies under conditions that allowed the simultaneous determination of In 3+ and Te 4+, indicate a film composition with a slight excess of In under virtually all deposition conditions. Film morphology was found to be dependent on the substrate used, but cracks and pits were always present after heat treatment. As-deposited films were amorphous, whereas 250°C heat treated films showed small diffraction peaks without preferred alignment. The optical bandgap of the films was determined by absorption spectroscopy to be 0.96 eV. Semiconductor junction devices, made with n-type CdS and CdSe (general structure ITO/CdX/p-In 2Te 3/AuPd), were characterized by measurement of the photovoltage/ photocurrent and action spectra. In addition the uniformity of photoresponse across the surface was determined using a scanning laser microscope.
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