Abstract
Nanostructured BiVO4 films were synthesized by coevaporation of bismuth and vanadium in an oxygen ambient, a process referred to as reactive ballistic deposition (RBD). The films were tested in various electrolyte solutions to assess their activity for photoelectrochemical water oxidation. Deposition parameters, including the V/Bi atomic flux ratio and the incident angle of deposition, were adjusted. Films deposited with excess vanadium (V/Bi = 2) and incident angles of deposition at 65° showed the highest initial photocurrents with IPCE values above 21% for light wavelengths of 340−460 nm (in 0.5 M Na2SO4 at 1.0 V vs Ag/AgCl). With continued illumination the excess vanadium in these films dissolved into the electrolyte and the photocurrents dropped by 60−75% before reaching steady state. The steady-state photocurrent and IPCE values (above 14% for 340−460 nm light) were higher than the initial values for films synthesized with stoichiometric amounts of vanadium and bismuth (V/Bi = 1) and incident angles ...
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