Abstract
Polycrystalline iron oxide electrodes made by thermal decomposition of Fe (C_8H_(15)O_2)_3[Iron (Ⅲ) 2-ethylhexanoate] on Fe, Ti and Pt substrates were characterized with respectto their dielectric and photoelectrochemical properties. The thermal decomposition process pro-duces a stable ferric oxide lattice (Fe_2O_3) possessing n-type semiconductor characteristics. Thephotoelectrochemical behavior of painted electrodes was shown to be equivalent to iron oxideproduced by thermal or anodic oxidation. From A. C. impedance measurements, an equivalentcircuit of the interface was constructed, that provided values for the space charge capacitanceand resistance. With the equivalent circuit, impedance measurements can be used to ascertainrapidly the relative photo-efficiencies of photoanodes.
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