Abstract
In this paper we present results of a study of the influence of sulfur on the photoelectrical properties of experimental Au/GaAs (1− x) S x /Mo structures. The GaAs (1− x) S x polycrystalline layer was deposited by radio frequency sputtering in a mixed argon and hydrogen sulfide gas. The open-circuit voltage ( V oc ), the short-circuit current ( I sc ) under a given illumination have been measured as a function of the molar fraction x from 0 to 0.26. For the Au/GaAs (1− x) S x /Mo structure the diminution in interface state activity with the increase of x corresponds to an improvement of the open-circuit voltage and is limited by the increase of bulk and ohmic contact resistance. A variation of sulfur concentration at the back contact shows the good interface properties of the GaAs (1− x) S x compound.
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