Photoelectrical properties of Al/nanocrystalline CeO<inf>x</inf>/Si/Al structures

Abstract

Al/nanocrystalline CeOx/Si/Al structures have been obtained using flash evaporation method. The effect of technological factors (substrate temperature and type) on the CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> films microstructure as well as on photoelectric properties of the Al/nc-CeOx/Si/Al structures has been investigated. The method of high-frequency C-V characteristics was used to study the cerium oxide film/singlecrystalline silicon interface. On the basis of the synthesized nanocrystalline (nc) CeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> films obtained by the flash method we have developed new types of heterojunction photodetectors with enhanced photosensitivity (330 uA/lm·V) in the visible range. A stable metal/nc-CeOx/Si structures have been received that reveal an interface state desity of 7·10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> and a DC dielectric constant of about 15.