Abstract
Nanocrystalline CeO x film in the Al/nc-CeO x /Si-Al structures has been obtained using flash evaporation method and method of metallic Ce oxidation. The electrophysical properties of the Al/nc-CeO x /Si/Al structures and the effect of technological factors on these properties have been investigated. It was revealed that the nanocrystalline CeO x layer in the Al/nc-CeO x /Si/Al structures is a semiconductor with an electronic conductivity and volume resistivity is within the range of 0.5–30 MΩ·cm. Based on the synthesized Al/nc-CeO x /Si/Al structures the new types of heterojunction diodes with high interface quality have been developed. Interface state density of obtained structures is of about 7·1010 cm−2·eV−1.
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