Abstract
ABSTRACTThe TiO2 thin films have been deposited onto Si epi‐layer‐covered Si substrates by magnetron sputtering of a TiO2 target. The influence of thermal annealing conditions on the photoelectrical characteristics of TiO2–n‐Si structures has been studied. The photoresistive effect is observed for the films annealed in Ar at T = 500°C and 750ºC. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1113–1116, 2016
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