Abstract
A technique for local diffusion doping of the certain areas of the ZnO film of donor (Ga) and acceptor (Li) impurities has been developed to produce the films with the topological pattern of doping regions. The diffusion process, electrophysical and photoelectric properties of diffusion-doped samples of the planar MSM structures based on the Al–ZnO–Al, Al–ZnO:Ga–Al and Al–ZnO:Li–Al with the metallic aluminum as contacts are investigated. It is shown that the diffusion introduction of the impurity of gallium suppresses the photosensitivity, and the diffusion introduction of lithium into the ZnO films increases the photosensitivity as compared to the undoped areas of the same film.
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