Abstract
The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility,ν, and resistivity,ρ, after doped Cu. It can be found that theνdecreased from to and theρincreased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu2+ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.
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