Abstract
This paper presents the fabrication of a photodetector using a ZnO/PbS-EDT heterojunction. The combination of PbS QDs with narrow bandgap and ZnO QDs with excellent electron transport properties results in a high-performance photodetector with broad-spectrum capabilities. The solid-state ligands are used to exchange PbS QDs to form a thick light-absorbing layer. The study also discusses the effect of UV treatment on the morphology of the PbS film and its impact on the device performance. The UV-treated devices exhibit good performance even when operated at 0V. When subjected to 940 nm light irradiation, the maximum responsivity is 37.5 mA/w, the detectivity is 1.16x1012 Jones, and the rise and fall time are 53 μs and 35 μs, respectively. This device demonstrates remarkable performance with its fast response, high responsivity, and low noise.
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