Abstract
Many attempts have been made to build fast, sensitive photodetectors which offer simple fabrication and ease of integration. Regarding this view, GaAs Schottky barrier photodiodes seem to be ideally suited for use in the near-infrared region. The fabrication of GaAs Schottky photodiodes and the investigation of their properties (mainly photocurrent multiplication) are presented in this paper. A photocurrent gain of 10 4 was achieved and dependences of gain on incident power level and position were observed.
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