Abstract
We present photocurrents at several temperatures carried out in a bulk heterojunction photovoltaic device. To explain the results, we developed an analytical model assuming non-injecting contacts and equal mean free paths for electrons and holes. The fitting of the equation to the experimental data provided the temperature evolution of the charge transfer state dissociation probability (P) and μτ, where μ is the charge carrier mobility and τ is the charge carrier lifetime. The photocurrent expression tends towards a saturation value of eGPL for high electric fields, where GP is the generation rate of charge carriers.
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