Abstract
A photocurrent gain mechanism which takes advantage of the piezoelectric fields present in devices based on polar heterostructures is proposed. Piezoelectrically induced electric fields can be designed to generate a negative average electric field (NAF) region under certain bias conditions. For carrier transport limited by the barrier formed by the NAF region, photoinduced screening will result in photocurrent gain. This mechanism allows one to explain the experimental results obtained in Schottky barrier photodiodes with (In,Ga)N∕GaN multiple quantum wells embedded in their active region. Responsivities higher than 1A∕W and low dark currents below 10nA∕mm2 at forward voltage were obtained.
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