Year-end Sale % OFF 
Abstract
A new physical model is presented for the illumination-dependence of the zero-bias resistance-area product (R0A) of HgCdTe photodiode. The model is based on three independent mechanisms. They are the depletion region volume change with the applied bias, the diffusion distance change with the moving depletion region edge, and the minority carrier accumulation in the depletion region which affects the minority carrier diffusion. Analytic equations are derived for the photodiode current-voltage characteristics and R0A products. The results of the model have been compared with experimental data obtained from several Hg0.7Cd0.3Te diodes with an identical diode structure having different absorbing amount of light. The model showed good agreement with the experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
