Abstract
A model of calculation of the luminescence intensity under cathodic excitation has been performed. The procedure used for such calculation has taken into account the influence of the electron beam parameters (energy E 0, intensity I p) on the depletion region at the free semiconductor surface and surface defects density ( N t) and concentration ( N a). The recombination of minority and majority carriers at the semiconductor surface is also examined within the Shockley–Read–Hall framework. In addition, the continuity equations of both majority and minority carriers are solved in the neutral and depletion regions, in order to deduce in a self-consistent way the carriers concentration, the barrier height, the depletion thickness and to obtain the cathodoluminescence intensity versus the beam parameters. The numerical results show that the depletion region Z d depends on the density of surface defects ( N t) and the concentration of acceptors ( N a). Consequently, the cathodoluminescence intensity is modified.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
