Photoconductivity properties of doped GaTe compound

Abstract

In this work, we consider the results of studying the spectral distribution, the temperature dependence of photoconductivity, and the dependence of the spectral distribution of photoconductivity on the applied electric field of doped with rare earth elements GaTe single crystals in the temperature range of 30–300 K. As the temperature decreases to 30 K, the impurity peaks disappear, and the intense maximum shifts to the short wavelength region. The increase in impurity photoconductivity with increasing temperature is due to the thermooptical filling of acceptor levels with electrons and their further transition to the conduction band under the action of illumination. Such a temperature dependence of the photoconductivity is explained by the presence of acceptor levels in the band gap.