Abstract
Amorphous hydrogenated carbon ( a-C:H) films were deposited (at room temperature) by plasma CVD of acetylene onto glass substrates with substrate bias ( V B) varying within 0 to −400 V. Films deposited at ¦V B ¦≥ 200 V showed significant photoconductivity. The photoconductivity of the films was measured under different illumination level (0–100 mW/cm 2). Hopping at the shallow localized states was the predominant mode of electron transport process in these films. Photo-induced conduction process in the amorphous material in the temperature region 80 < T < 300 K could be explained by the multi-trapping model of photo excited carriers.
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