Abstract
Steady-state and time-dependent photoresponse have been studied in a vacuum-deposited thin film of Ge:Si:As:Te alloy. In the steady-state at room temperature the quantum efficiency is essentially independent of photon energy, and the photoresponse linear in photon flux. The photoconductive gain factor exhibits a maximum in the neighborhood of 250°K, and decreases exponentially at lower temperatures. At 77°K, the photoresponse varies approximately as the square root of photon flux; while voltage-current curves in the dark and under illumination give evidence of trap-controlled, space-charge-limited conduction. An analysis of the thermally stimulated current following exposure to pair-producing radiation at low temperatures shows that the dominant trapping centers lie approximately in the middle of the mobility gap, and their density probably exceeds 1019/cm3. An interpretation of these results is offered in terms of the band model of Cohen, Fritzsche and Ovshinsky.
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