Abstract
It has been suggested that Al/Ga separation could lead to a reduction of the DX center density in the case of short period-superlattices (SPSs). In this work, SPSs were grown by MBE and uniformly or selectively doped with silicon. In selectively doped SPSs, silicon was confined to GaAs, or AlAs. We focus on Hall and photoHall data which are compared with AlGaAs:Si alloys having similar Al content. It is found that SPSs behaved like the alloy, i.e. persistent photoconductivity (PPC) is observed in all samples independently of the dopant location. The multibarrier structure of the DX center is clearly revealed by studying the thermal annealing of PPC.
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