Abstract
The variations of responsivity and ɡ- r noise with background photon flux above 10 16 photons cm −2 sec −1 show strong majority carrier effects for 0.1 eV HgCdTe detectors. The background dependence of Auger lifetime and excess majority and minority carriers densities are sufficient to describe observed phenomena. Excess l/f noise seems related to the minority carrier density resulting in an observed decrease in l/f noise corner with reduced background photon flux.
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