Abstract
A low temperature photochemical vapor deposition method utilizing mercury sensitization was used to deposit thin silicon nitride films. The chief advantages of the photochemical process are the low deposition temperatures, conformal coverage, reduction of electromagnetic radiation and charged species, and ability to tailor stoichiometry for specific applications. The effects of process variables upon the optical characteristics of nitride films were studied in this investigation. These properties were found to be variable over a wide range. Refractive index was strongly dependent upon the deposition temperature and ammonia/silane ratio, with higher temperatures and lower gas ratios yielding denser films, but at reduced deposition rates. The etch rate of these films was strongly influenced by the annealing temperature, with lower rates resulting at higher temperatures, consistent with increased densification and decreased pinhole densities. Electrical properties of typical films, including dielectric constant, breakdown strength, and mobile ion concentration were also determined.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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