Abstract
A photo-chemical vapor deposition, using ultraviolet light excitation and a mercury photo-sensitization, was investigated for depositing hydrogenated amorphous silicon films from SiH4. The photoelectric and structural properties were examined to characterize the deposited films. Those properties were depended strongly on substrate temperature, and the films which were deposited at a substrate temperature more than 200°C contained dominant SiH configurations. A relatively large single crystalline grain size of about 0.5 μm was observed in a 1.0 μm thick film, which was obtained at a substrate temperature as low as 200°C. Phosphorus impurity doping into the films and Pt-Schottky diode fabrication were also attempted.
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