Abstract
The use of an excimer benchtop pulsed UV laser as the energy source for the photochemical modification of the surface of diamond films is reported. Boron-doped nanocrystalline diamond (NCD) films were deposited on Si wafers via plasma-enhanced chemical vapour deposition (PECVD). The as-deposited films were characterised by scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD). Following characterisation, the surfaces of the films were subjected to a photochemical reaction with 2,2,2-trifluoroethyl undec-10-enoate using two different sources of radiation: a benchtop UV lamp (254 nm) and a KrF excimer pulsed UV laser (248 nm). The photochemically treated films were characterised by contact angle measurements and X-ray photoelectric spectroscopy (XPS) using non-treated films as a control. The use of a pulsed UV laser source was shown to reduce the photochemical reaction time from several hours to a few minutes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
