Abstract
Non-contact, non-intrusive photo-carrier radiometry (PCR) was used for monitoring the ion implantation of (p-type) industrial-grade silicon wafers. The silicon wafers were implanted with boron in the dose range of 1x10 11 to 1x10 16 ions/cm 2 at various implantation energies (10 keV to 180 keV). The results indicated excellent sensitivity to the implantation doses and energies. This laser-based photo-carrier diffusion-wave technique monitors harmonically photo-excited and recombining carriers and shows substantial potential advantages over existing methodologies for characterization of multiple semiconductor processes such as ion implantation and other device fabrication steps in the Si wafer processing industry.
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