Abstract
Non-contact, non-intrusive Photo-Carrier Radiometry (PCR) was used for monitoring nano-depth junctions in industrial-grade silicon wafers. The silicon wafers were implanted with arsenic to the dose of 5E10 14 cm -2 . The junction depth was in the 30 nm to 100 nm range. Quantitative results for PCR sensitivity to the junction depth and implantation energies are presented. This laser-based carrier-wave technique monitors harmonically photo-excited and recombining carriers and shows great potential advantages for the characterization of multiple semiconductor processes such as ion implantation, ultra shallow junction (USJ) depth determination and other Si wafer process steps.
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