Photocarrier collection from depletion layer of LaMnO3

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We have investigated the bias electric field dependence of the photocurrent for LaMnO3/Nb-doped SrTiO3 heterostructures. The photocarriers generated in LaMnO3 are more efficiently injected into Nb-doped SrTiO3 when the reverse bias voltage is applied. Within the rigid-band scheme, this can be attributed to the bias voltage–induced expansion of the depletion layer. Although LaMnO3 is a typical electron-correlated insulator, its interface band profile under the bias voltage is well modeled as that of the conventional dilutely doped p-type semiconductor.