Abstract
This paper reports the results of photocapacitance measurements applied to the metal‐ structure. Photocapacitance measurements under a constant capacitance condition determine the spatial distribution of deep levels existing at interface regions. The photocapacitance method revealed deep levels distributed in a spectral region of 0.4–1.05 eV optically, and an optical level located 1.05 eV below the conduction band in the n‐ interface region. With respect to p‐, deep levels distributed at 0.4–0.85 eV and 0.85 eV, 1.05 eV levels above the valence band, were observed. Differences of interface level densities are shown as a function of Si conduction type and different preparations of oxide layers. Comparisons with the results of capacitance‐voltage measurements are also discussed. © 1999 The Electrochemical Society. All rights reserved.
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